NTE2988 MOSFET N-Channel, Enhancement Mode High Speed Switch
Description: The NTE2988 is an N-Channel, enhancement mode, power field effect transistor in a TO52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers. Features: D High Input Impedance D Extremely Fast Switching D Rugged-Dissipation Limited SOA D Internal Drain-Source Diode Benefits: D Reduced Component Count D Simpler Designs - Directly Interfaces CMOS & TTL D Improved Circuit Performance D Increased Reliability Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Peak Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V, -0.3V Drain Current Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Maximum Dissipation (TC = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315mW Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5mW/C Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +300C Note 1. Limited by package dissipation. Note 2. Pulse test - 80s to 300s, 1% duty cycle.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current BVDSS VGS(th) IGSS IDSS ID(on) rDS(on) ID = 1000A, VGS = 0 VDS = VGS, ID = 1mA VGS = 15V, VDS = 0 VDS = 50V, VGS = 0 VGS = 5V, ID = 0.2A, Note 2 VGS = 10V, ID = 0.5A, Note 2 Static-Drain-Source On-State Resistance Dynamic Characteristics Forward Transconductance Input Capacitance Reverse Transfer Capacitance Common Source Output Capacitance Turn-On Time Turn-Off Time Drain-Source Diode Characteristics Forward ON Voltage Reverse Recovery Time VSD trr IS = -0.5A, VGS = 0, Note 2 VGS = 0, IF = IR = 0.5A - - -0.85 160 - - V ns gfs Ciss Crss Coss tON tOFF VDD = 15V, RL = 23, Rg = 25, ID = 0.6A VDS = 15V, ID = 0.5A, Note 2 VDS = 25V, f = 1MHz 200 - - - - - - - - - - - - 60 5 25 10 10 mS pF pF pF ns ns VGS = 5V, ID = 0.2A, Note 2 VGS = 10V, ID = 0.5A, Note 2 60 0.8 - - - - - - - - - - - - - - - 2.5 100 10 1.5 2.5 7.5 5.0 V V nA A V V Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse test - 80s to 300s, 1% duty cycle.
.230 (5.84) Dia Max 195 (4.95) Dia Max .150 (3.81) Max
.500 (12.7) Min
.019 (0.5) Dia Gate Source Drain/Case
45
.040 (1.01)
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